Samsung Launches HBM3E "Shinebolt": Targeting Next Generation Artificial Intelligence Applications
Recently, Samsung held the "Samsung Memory TechDay 2023" event, showcasing a series of innovative technologies and products leading the era of ultra large scale artificial intelligence (AI), including HBM3E "Shinebolt", LPDDR5XCAMM2, and detachable AutoSSD, to accelerate technological progress in future applications including cloud, edge devices, and automobiles.Samsung has announced the launch of a new generation of HBM3EDRAM called "Shinebolt", targeting next-generation artificial intelligence applications, increasing total cost of ownership (TCO), and accelerating artificial intelligence model training and inference speed in data centers
Recently, Samsung held the "Samsung Memory TechDay 2023" event, showcasing a series of innovative technologies and products leading the era of ultra large scale artificial intelligence (AI), including HBM3E "Shinebolt", LPDDR5XCAMM2, and detachable AutoSSD, to accelerate technological progress in future applications including cloud, edge devices, and automobiles.
Samsung has announced the launch of a new generation of HBM3EDRAM called "Shinebolt", targeting next-generation artificial intelligence applications, increasing total cost of ownership (TCO), and accelerating artificial intelligence model training and inference speed in data centers.
The speed per pin of HBM3E is 9.8GB/s, which means the total bandwidth exceeds 1.2TB/s. In order to achieve higher stacking layers and improve thermal characteristics, Samsung has optimized Non Conductive Film (NCF) technology to eliminate gaps between chip layers and maximize thermal conductivity. At present, HBM3 using 8-layer and 12-layer stacking schemes has started mass production, and samples of HBM3E are also being shipped to customers. Samsung also plans to leverage the advantages of its overall semiconductor solution provider to provide customized services that combine next-generation HBM, advanced packaging technology, and OEM products.
In addition to HBM3E, other key products of this press conference also include the industry's highest capacity 32GbDDR5DRAM, the industry's first 32Gbps GDDR7, and PB level PBSSD that can significantly improve server application storage capacity. In addition, 7.5Gbps of LPDDR5XCAM21, 9.6Gbps of LPDDR5XDRAM, LLW2DRAM specifically designed for artificial intelligence on devices, next-generation UFS, and QLCSSDBM9C1 for personal computers were also displayed.
Tag: Samsung Launches HBM3E Shinebolt Targeting Next Generation Artificial Intelligence
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